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Full text of "USPTO Patents Application 10050484"

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Number 


Hits 


Search Text 


DB 


Time stamp 


- 


1 


("6451512") .PN. 


USPAT; 


2003/06/28 








US-PGPUB 


12:30 


- 


3 


(("5563238") or ("3811931") or 


US PAT; 


2003/06/28 






("3676401") ) .PN. 


US-PGPUB 


15 : 11 


- 


1862 


(resist or photoresist or photopolymer$7 ) 


USPAT; 


2003/06/28 






same (coupl$3 or bond$3 or prim$3 or 


US-PGPUB; 


15 :29 






adhes$7) with (lactic or ketone or 


EPO; JPO; 








organometal$3 or metal adj salt or 


IBM_TDB 








siloxane or silane or 










hexamethyldisilazane or HMDS) 






- 


1101 


( (resist or photoresist or 


USPAT; 


2003/06/28 






photopolymer$7) same (coupl$3 or bond$3 


US-PGPUB; 


15:46 






or prim$3 or adhes$7) with (lactic or 


EPO; JPO; 








ketone or organometal$3 or metal adj salt 


IBM_TDB 








or siloxane or silane or 










hexamethyldisilazane or HMDS) ) and 










(semiconduct$3 or semi adj conduct$3 or 










wafer or silicon or "Si") same (coupl$3 










or bond$3 or prim$3 or adhes$7) 






- 


397 


( ( (resist or photoresist or 


USPAT; 


2003/06/28 






photopolymer$7) same (coupl$3 or bond$3 


US-PGPUB; 


15:47 






or prim$3 or adhes$7) with (lactic or 


EPO; JPO; 








ketone or organometal$3 or metal adj salt 


IBM_TDB 








or siloxane or silane or 










hexamethyldisilazane or HMDS) ) and 










(semiconduct$3 or semi adj conduct$3 or 










wafer or silicon or "Si") same (coupl$3 










or bond$3 or prim$3 or adhes$7) ) and 










(degrad$4 or decompos$5 or break$3 or 










downgrad$4 or deteriorat$4 or 










disintegrat$4 or decay$3 or dissolv$4 or 










fragment$4) same (coupl$3 or bond$3 or 










prim$3 or adhes$7) 






- 


42 


(({(resist or photoresist or 


USPAT; 


2003/06/28 






photopolymer$7) same (coupl$3 or bond$3 


US-PGPUB; 


15:50 






or prim$3 or adhes$7) with (lactic or 


EPO; JPO; 








ketone or organometal$3 or metal adj salt 


IBM TDB 








or siloxane or silane or 










hexamethyldisilazane or HMDS) ) and 










( semi conduct $3 or semi adj conduct $3 or 










wafer or silicon or "Si") same (coupl$3 










or bond$3 or prim$3 or adhes$7) ) and 










(degrad$4 or decompos$5 or break$3 or 










downgrad$4 or deteriorat$4 or 










disintegrat$4 or decay$3 or dissolv$4 or 










fragment$4) same (coupl$3 or bond$3 or 










prim$3 or adhes$7) ) and 










(430/311,319,327-329) .eels. 







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355 



12 



({((resist or photoresist or 
photopolymer$7) same (coupl$3 or bond$3 
or prim$3 or adhes$7) with (lactic or 
ketone or organometal$3 or metal adj salt 
or siloxane or silane or 
hexamethyldisilazane or HMDS) ) and 

(semiconduct$3 or semi adj conduct$3 or 
wafer or silicon or "Si") same (coupl$3 
or bond$3 or prim$3 or adhes$7) ) and 

(degrad$4 or decompos$5 or break$3 or 
downgrad$4 or deteriorat$4 or 
disintegrat$4 or decay$3 or dissolv$4 or 
fragment$4) same (coupl$3 or bond$3 or 
prim$3 or adhes$7)) not ((({(resist or 
photoresist or photopolymer$7 ) same 

(coupl$3 or bond$3 or prim$3 or adhes$7) 
with (lactic or ketone or organometal$3 
or metal adj salt or siloxane or silane 
or hexamethyldisilazane or HMDS) ) and 

(semi conduct $3 or semi adj conduct$3 or 
wafer or silicon or "Si") same (coupl$3 
or bond$3 or prim$3 or adhes$7) ) and 

(degrad$4 or decompos$5 or break$3 or 
downgrad$4 or deteriorat$4 or 
disintegrat$4 or decay$3 or dissolv$4 or 
fragment$4) same (coupl$3 or bond$3 or 
prim$3 or adhes$7) ) and 

(430/311,319,327-329) .eels.) 

{(light) near3 (degrad$4) near3 (prim$3 
or adhes$7) same (resist or photoresist) ) 
not ( ( { (resist or photoresist or 
photopolymer$7) same (coupl$3 or bond$3 
or prim$3 or adhes$7) with (lactic or 
ketone or organometal$3 or metal adj salt 
or siloxane or silane or 
hexamethyldisilazane or HMDS)) and 

(semi conduct $3 or semi adj conduct$3 or 
wafer or silicon or "Si") same (coupl$3 
or bond$3 or prim$3 or adhes$7) ) and 

(degrad$4 or decompos$5 or break$3 or 
downgrad$4 or deteriorat$4 or 
disintegrat$4 or decay$3 or dissolv$4 or 
fragment$4) same (coupl$3 or bond$3 or 
prim$3 or adhes$7)) not (((((resist or 
photoresist or photopolymer$7) same 

(coupl$3 or bond$3 or prim$3 or adhes$7) 
with (lactic or ketone or organometal$3 
or metal adj salt or siloxane or silane 
or hexamethyldisilazane or HMDS)) and 

(semi conduct $3 or semi adj conduct $3 or 
wafer or silicon or "Si") same {coupl$3 
or bond$3 or prim$3 or adhes$7) ) and 

(degrad$4 or decompos$5 or break$3 or 
downgrad$4 or deteriorat$4 or 
disintegrat$4 or decay$3 or dissolv$4 or 
fragment$4) same (coupl$3 or bond$3 or 
prim$3 or adhes$7)) and 

(430/311,319,327-329) .eels.) 

((light) near3 (degrad$4) near3 (prim$3 
or adhes$7) same (resist or photoresist)) 



((light) near3 (degrad$4) near3 (prim$3 
or adhes$7) and (resist or photoresist)) 



((light) near3 (degrad$4) with (primer or 
priming) same (resist or photoresist)) 



US PAT/ 
US-PGPUB; 
EPO; JPO; 
IBM TDB 



2003/07/09 
12:01 



US PAT ; 
US-PGPUB; 
EPO; JPO; 
IBM TDB 



US PAT; 
US-PGPUB; 
EPO; JPO; 
IBM_TDB 
US PAT; 
US-PGPUB; 
EPO; JPO; 
IBM_TDB 
US PAT; 
US-PGPUB; 
EPO; JPO; 
IBM TDB 



2003/07/09 
12:39 



2003/07/09 
12:40 



2003/07/16 
16:26 



2003/07/09 
12:47 



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Page 2 



- 


88 


( (bilayer or bi adj layer) same positive 


US PAT ; 


2003/07/16 






near2 (resist or photoresist)) 


US-PGPUB; ' 


16:27 








EPO; JPO; 










IBM TDB 




- 


74 


(((bilayer or bi adj layer) same positive 


US PAT / 


2003/07/18 






near2 (resist or photoresist))) and 


US-PGPUB; 


13 : 13 






(thick or thickness) same (resist or 


EPO; JPO; 








photoresist) 


IBM_TDB 




- 


2 


( (hexamethyldisilazane or HMDS) near5 


USPAT; 


2003/07/18 






decompos$4) same (resist or photoresist) 


US-PGPUB; 


14 : 06 








EPO; JPO; 










IBM_TDB 




- 


12 


((hexamethyldisilazane or HMDS) nearS 


USPAT; 


2003/07/18 






(light or uv) ) same (resist or 


US-PGPUB; 


15 : 43 






photoresist) 


EPO; JPO; 










IBM_TDB 




- 


92 


(134/1 .3) . eels . and (light or uv) same 


USPAT; 


2003/07/18 






(resist or photoresist) 


US-PGPUB; 


15 : 34 








EPO; JPO; 










IBM_TDB 




- 


6 


( (134/1.3) .eels, and (light or uv) same 


USPAT; 


2003/07/18 






(resist or photoresist)) and 


US-PGPUB; 


15:35 






(hexamethyldisilazane or HMDS) 


EPO; JPO; 










IBM TDB 




- 


17 


((hexamethyldisilazane or HMDS) near5 


USPAT; 


2003/07/18 






(light or uv or ultraviolet) ) same 


US-PGPUB; 


16:03 






(resist or photoresist) 


EPO; JPO; 










IBM_TDB 




- 


16 


(light or uv or ultraviolet) same 


USPAT; 


2003/07/18 






( (bond$3 or coupl$3) near2 (strength or 


US-PGPUB; 


16:17 






energy)) same ((silicon or Si) nearS 


EPO; JPO; 








(oxygen) ) 


TDM THU 


2003/07/18 




19 


(light or uv or ultraviolet) same 


USPAT; 






( (bond$3 or coupl$3) near2 (strength or 


US-PGPUB; 


16: 18 






energy)) same ("Si— 0" or "0— Si") 


EPO; JPO; 










IBM TDB 





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